 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW BC639 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 80 80 5 1 800 -55 to +150 TO92 UNIT V V V A mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 80 80 5 0.1 0.5 1.0 25 40 25 200 TYP. MAX. UNIT V V V A CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=10A, IC=0 VCB=30V IC=500mA, IB=50mA* IC=500mA,VCE=2V* IC=5mA, VCE=2V* IC=150mA, VCE=2V* IC=500mA, VCE=2V* Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency VCE(sat) VBE(on) hFE V V 160 MHz fT IC=50mA, VCE=2V f=100MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-18 |
Price & Availability of BC639
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |